Difference between revisions of "Memory devices"
From Wiki at Neela Nurseries
m (Adding reference to Microchip serial flash NOR type memory device.) |
m (adding notes on Microchip's SST25VF016B serial NOR flash part.) |
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Microchip memory devices: | Microchip memory devices: | ||
| + | <ul> | ||
* https://www.microchipdirect.com/product/SST25VF016B-50-4C-S2AF | * https://www.microchipdirect.com/product/SST25VF016B-50-4C-S2AF | ||
| + | * https://www.microchip.com/wwwproducts/en/SST25VF016B . . . good summary, links to more details and datasheet | ||
| + | |||
| + | An excerpt: | ||
| + | <ul> | ||
| + | <i> | ||
| + | <pre> | ||
| + | 16Mb 2.7-3.6V SPI Serial Flash | ||
| + | |||
| + | Status: In Production | ||
| + | Features: | ||
| + | |||
| + | Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3 | ||
| + | Up to 50 MHz Clock Frequency | ||
| + | Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention | ||
| + | Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical) | ||
| + | Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks | ||
| + | Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical) | ||
| + | </pre> | ||
| + | </i> | ||
| + | </ul> | ||
| + | </ul> | ||
| + | |||
| + | View More | ||
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Revision as of 19:15, 19 July 2021
Macronix International manufactures some 8Mbit FLASH NOR memory devices:
Microchip memory devices:
- https://www.microchipdirect.com/product/SST25VF016B-50-4C-S2AF
- https://www.microchip.com/wwwproducts/en/SST25VF016B . . . good summary, links to more details and datasheet
16Mb 2.7-3.6V SPI Serial Flash
Status: In Production
Features:
Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
Up to 50 MHz Clock Frequency
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
View More
